Search for dissertations about: "InP photodetector"
Found 5 swedish dissertations containing the words InP photodetector.
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1. III-V Nanowire-based Infrared Photodetectors : Design, Fabrication and Characterization
Abstract : Semiconductors are the backbone of almost every electrical or optical component, one of them being photodetectors. Photodetectors are used in many applications such as digital cameras or solar panels. They can also be designed to detect the omnipresent infrared radiation, discovered in 1800, which is invisible to human eye. READ MORE
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2. Broadband Receiver Electronic Circuits for Fiber-Optical Communication Systems
Abstract : The exponential growth of internet traffic drives datacenters to constantly improve their capacity. As the copper based network infrastructure is being replaced by fiber-optical interconnects, new industrial standards for higher datarates are required. READ MORE
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3. InP/InAsP Quantum Discs-in-Nanowire Array Photodetectors: Design, Fabrication and Optical Performance
Abstract : This thesis focuses on processing and electro-optical investigations of two- and three-terminal photodetectors based on large arrays of around three million n+-i-n+ InP nanowires with embedded InAsP quantum heterostructures for broadband detection. First, we investigated the optoelectronic behavior of two-terminal photodetectors under selective 980 nm excitation of the 20 axially embedded InAsP quantum discs in each of the nanowires. READ MORE
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4. Infrared Photodetectors based on Nanowire Arrays with Embedded Quantum Heterostructures
Abstract : Optical sensors operating in the infrared range of the electromagnetic spectrum are key components in a variety ofapplications including optical communication, night vision, medical diagnosis, surveillance, and astronomy.Semiconductor nanowires have great potential for realizing broadband infrared photodetectors with excellentresponsivity, low dark current and low noise, and a unique compatibility with commercial silicon-based electronics. READ MORE
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5. Junction Engineering in Nanostructured Optoelectronic Devices
Abstract : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. READ MORE