Search for dissertations about: "InP"
Showing result 1 - 5 of 180 swedish dissertations containing the word InP.
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1. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions
Abstract : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. READ MORE
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2. Photoluminescence Studies of Polytype Heterostructured InP Nanostructures
Abstract : The interface between two semiconductors significantly influences their optical and electronic properties. In contrast to traditional material heterostructures, polytype heterostructures between wurtzite (wz) and zincblende (zb) segments in homomaterial InP nanostructures exhibit sharp interfaces with minimal strain. READ MORE
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3. Ion beam etching of InP based materials
Abstract : Dry etching is an important technique for pattern transferin fabrication of most opto-electronic devices, since it canprovide good control of both structure size and shape even on asub-micron scale. Unfortunately, this process step may causedamage to the material which is detrimental to deviceperformance. READ MORE
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4. InP based Micromechanics for Vertical-Cavity Micro-Opto-Electro-Mechanical Systems
Abstract : During the past decade, the amount of transmitted data hasbeen boosted due to an increasing use of the World Wide Web(WWW), video and audio transmissions. In the late 90s, thetraditional technology using twisted copper cables was nolonger capable to provide enough transmission capacity for theconstantly increasing data traffic. READ MORE
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5. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies
Abstract : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. READ MORE