Search for dissertations about: "Intrinsic defect"
Showing result 1 - 5 of 51 swedish dissertations containing the words Intrinsic defect.
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1. Defect Engineering in Kesterite Materials for Thin Film Solar Cells
Abstract : Cu2ZnSnS4 has great potential to be applied as an earth abundant and non-toxic absorber material in thin film solar cells, based on its suitable optical properties. However, several challenges have prevented the achievable efficiencies from exceeding 12.6 %, which is well below marketable efficiencies compared to competing solar cell technologies. READ MORE
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2. On Defect Generation and the Appearance of Injection-Moulded Polymers
Abstract : This thesis addresses the generation of some important manufacturing defects associated with intrinsic limitations of the injection moulding process. These include bulk-surface structural discontinuities, particularly air traps and welds, bulk-surface compositional inhomogeneities and gloss and colour variations. READ MORE
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3. Defect Induced Room-Temperature Ferromagnetism in ZnO and MgO Thin FIlms and Device Development
Abstract : This thesis presents the discovery of defect induced room-temperature ferromagnetism in industrially important ZnO and MgO thin films, and establishes from a systematic study, in both ZnO and MgO films, the unique phenomenon of the sequences of transitions from ferromagnetism to para-, and eventually the well known diamagnetism of the bulk as a function of film thickness. Highly oriented and high quality dense thin films of ZnO and MgO have been deposited by reactive (balanced) magnetron sputtering under different ambience conditions and deposition temperatures. READ MORE
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4. Point defect interactions and structural stability of compounds
Abstract : Theoretical studies of point defect interactions and structural stability of compounds have been performed using density functional theory. The defect-related properties, such as activation energy of diffusion, electronic and magnetic structure of selected materials have been studied. READ MORE
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5. Electronic properties of intrinsic defects and impurities in GaN
Abstract : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. READ MORE