Search for dissertations about: "Ion-bombardment"
Showing result 1 - 5 of 22 swedish dissertations containing the word Ion-bombardment.
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1. Engineered ion-bombardment as a tool in thin film deposition
Abstract : Energetic-ion bombardment has become an attractive route to modify the crystal growth and deposit high quality thin films. In high-power impulse magnetron sputtering (HiPIMS) where the discharge is characterized by a significant amount of ions of the sputter-ejected atoms, energetic-ion bombardment effects could not be underestimated. READ MORE
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2. Fundamental Processes in SiO2 under Ion Bombardment
Abstract : Investigations of sputtering, electron emission and oxide growth under 40-300 keV H+, He+, N+, Ne+, Ar+, Kr+ and Xe+ ion bombardment of SiO2 are presented in this thesis. To accurately determine SiO2 sputtering yields, a new measurement method was developed where the electron emission was monitored during sputtering through thin SiO2 films on Si substrates. READ MORE
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3. Sputtered Carbon Nitride Thin Films
Abstract : The relation between the growth conditions and the film structure and properties of reactively magnetron sputtered carbon nitride CNx (0 ≤ x ≤ 0.6) thin films has been studied. The growth of CNx films has been studied when varying the process parameters, such as substrate temperature, N2 (partial) pressure and ion flux. READ MORE
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4. Development and tribological characterisation of magnetron sputtered TiB2 and Cr/CrN coatings
Abstract : The aim of this thesis was to develop wear resistant physical vapour deposited coatings of TiB2 as well as multilayers of Cr/CrN. The correlation between deposition parameters and fundamental coating properties such as microstructure, composition, residual stress and hardness has been investigated. READ MORE
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5. Magnetron Sputter Epitaxy of GaN
Abstract : Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. READ MORE