Search for dissertations about: "Irina Buyanova"
Showing result 1 - 5 of 10 swedish dissertations containing the words Irina Buyanova.
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1. Spin Properties in InAs/GaAs Quantum Dot based Nanostructures
Abstract : Semiconductor quantum dots (QDs) are a promising building block of future spin-functional devices for applications in spintronics and quantum information processing. Essential to the realization of such devices is our ability to create a desired spin orientation of charge carriers (electrons and holes), typically via injection of spin polarized carriers from other parts of the QD structures. READ MORE
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2. Excitonic Effects and Energy Upconversion in Bulk and Nanostructured ZnO
Abstract : Zinc Oxide (ZnO), a II-VI wurtzite semiconductor, has been drawing enormous research interest for decades as an electronic material for numerous applications. It has a wide and direct band gap of 3.37eV and a large exciton binding energy of 60 meV that leads to intense free exciton (FX) emission at room temperature. READ MORE
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3. Excitonic effects in ZnO
Abstract : Zinc Oxide (ZnO) is an extensively researched II-VI wide bandgap semiconductor material. As a promising material for future optoelectronic and spintronic applications, it continues to attract enormous amount of interest. READ MORE
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4. Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures
Abstract : This thesis work aims at a better understanding of magneto-optical properties of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures. The thesis is divided into two parts. The first part gives an introduction of the research fields, together with a brief summary of the scientific results included in the thesis. READ MORE
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5. Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures
Abstract : Low-dimensional semiconductor structures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), are materials with novel fundamental physical properties and a great potential for a wide range of nanoscale device applications. Here, especially promising are direct bandgap II-VI and III-V compounds and related alloys with a broad selection of compositions and band structures. READ MORE