Search for dissertations about: "Jun Lu"

Showing result 1 - 5 of 19 swedish dissertations containing the words Jun Lu.

  1. 1. Microstructure aspects of transition metal carbide thin films

    Author : Jun Lu; Uppsala universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; Chemistry; vapour deposition; transition metal carbide; nanocrystallinity; epitaxy; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : Transition metal carbides are important refractory materials used in many thin film applications. In this thesis, several transition metal carbides have been deposited using different chemical vapour deposition (CVD) and evaporation processes. In particular, the phase composition and microstructure of these carbide films have been studied. READ MORE

  2. 2. Synthesis and Characterization of 2D Nanocrystals and Thin Films of Transition Metal Carbides (MXenes)

    Author : Joseph Halim; Michael Barsoum; Lars Hultman; Yury Gogotsi; Per Eklund; Johanna Rosén; Jun Lu; Martin Magnuson; Ulf Jansson; Linköpings universitet; []

    Abstract : Two dimensional (2D) materials have received growing interest because of their unique properties compared to their bulk counterparts. Graphene is the archetype 2D solid, but other materials beyond graphene, such as MoS2 and BN have become potential candidates for several applications. READ MORE

  3. 3. Synthesis and transport properties of 2D transition metal carbides (MXenes)

    Author : Joseph Halim; Michel Barsoum; Lars Hultman; Per Eklund; Johanna Rosén; Martin Magnuson; Jun Lu; Christina Birkel; Linköpings universitet; []

    Abstract : Since the isolation and characterization of graphene, there has been a growing interest in 2D materials owing to their unique properties compared to their 3D counterparts. Recently, a family of 2D materials of early transition metal carbides and nitrides, labelled MXenes, has been discovered (Ti2CTz, Ti3C2Tz, Mo2TiC2Tz, Ti3CNTz, Ta4C3Tz, Ti4N3Tz among many others), where T stands for surface-terminating groups (O, OH, and F). READ MORE

  4. 4. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    Author : Jun Wu; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE

  5. 5. Effects of Environment on Charge Recombination in Organo-Metal-Halide Perovskite Observed by Photoluminescence Microscopy and Spectroscopy

    Author : Jun Li; NanoLund: Center for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Environment; photoluminescence microscopy and spectroscopy; organo-metal-halide perovskite; charge recombination;

    Abstract : Organo-metal-halide (OMH) perovskites form a new class of materials withperovskite crystal structure ABX3 where A is an organic molecule, B is lead (Pb)and X is a halide atom (I or Br). OMH perovskite semiconductors have been widely used in photovoltaics due to their very strong absorption of sun light, very suitable electrical properties, and the ease of preparation. READ MORE