Search for dissertations about: "Keywords: Silicon Carbide"

Showing result 1 - 5 of 8 swedish dissertations containing the words Keywords: Silicon Carbide.

  2. 1. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

    Author : Yu Cao; Chalmers tekniska högskola; []
    Keywords : Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; #955; Depth Profile; I-V Characteristics.;

    Abstract : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. READ MORE

  4. 2. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications

    Author : Sang Kwon Lee; KTH; []
    Keywords : Silicon carbide; ohmic and schottky contacts; co-evaporation; current-voltage; powre devices; nano-particles; Schottky barrier height lowering; TLM structures;

    Abstract : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. READ MORE

  5. 3. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

    Author : Erik Danielsson; KTH; []
    Keywords : silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

    Abstract : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. READ MORE

  6. 4. Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs

    Author : Carl-Mikael Zetterling; KTH; []
    Keywords : ;

    Abstract : Silicon carbide (SIC) is a wide bandgap semiconductor thathas been suggested as a replacement for silicon in applicationsusing high voltages, high frequencies, high temperatures orcombinations thereof. Several basic process steps need to bedeveloped for reliable manufacturing of long-term stableelectronic devices. READ MORE

  7. 5. Design and process issues of junction- and ferroelectric-field effect transistors in silicon carbide

    Author : Sang-Mo Koo; KTH; []
    Keywords : ;

    Abstract : In today’s solid-state electronics, Si and SiO2 are thedominant materials used. However, new materials such as SiC orferroelectrics are required for some special applications sincesuperior characteristics can be achieved in electronic devices. READ MORE