Search for dissertations about: "Kiselkarbid MOSFET"

Found 5 swedish dissertations containing the words Kiselkarbid MOSFET.

  1. 1. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics

    Author : Arash Edvin Risseh; Hans-Peter Nee; Torbjörn Thiringer; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Thermoelectricity; Power converter; Silicon Carbide; MOSFET; Power management; Thermoelectric generator; Renewable energy; Vehicle; Power electronic; Waste heat; Ultra-low inductance; Power module; Termoelektrisk energiomvandling; Kiselkarbid MOSFET; Effektomvandlare; Förnybar energikälla; Effektelektronik; Spillvärme; Effektmodul; Låg induktiv module; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. READ MORE

  2. 2. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    Author : Erik Velander; Hans-Peter Nee; Francesco Iannuzzo; KTH; []
    Keywords : Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE

  3. 3. SiC CMOS and memory devices for high-temperature integrated circuits

    Author : Mattias Ekström; Carl-Mikael Zetterling; B. Gunnar Malm; Tobias Erlbacher; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. READ MORE

  4. 4. On Reliability of SiC Power Devices in Power Electronics

    Author : Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE

  5. 5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Author : Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. READ MORE