Search for dissertations about: "LEDs"
Showing result 21 - 25 of 107 swedish dissertations containing the word LEDs.
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21. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures
Abstract : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. READ MORE
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22. Inorganic-Organic Hybrid Technology for Light Emitting Diodes
Abstract : Since the first report of inorganic light emtting diodes a century ago the field of inorganic light emitting diodes has evolved rapidly. T he development of light emitting diodes technology has caused their efficiency and light output to increase exponentially, with a doubling occuring about every 36 months since the 1960s, in a similar way to Moor´s law. READ MORE
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23. Toward the Optimization of Low-temperature Solution-based Synthesis of ZnO Nanostructures for Device Applications
Abstract : One-dimensional (1D) nanostructures (NSs) of Zinc Oxide (ZnO) such as nanorods (NRs) have recently attracted considerable research attention due to their potential for the development of optoelectronic devices such as ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). The potential of ZnO NRs in all these applications, however, would require synthesis of high crystal quality ZnO NRs with precise control over the optical and electronic properties. READ MORE
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24. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures
Abstract : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. READ MORE
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25. Si-based structures for light emission and detection
Abstract : Efforts to improve the optical performance of the indirect bandgap semiconductor silicon (Si) has been a major subject of research in the field of Si photonics due to the promising applications of Si based light emitters and detectors for optical communication. With that motivation three different Si based material systems were investigated; Si:Er/O layered structures, SiGe quantum dots and SiSn nano structures, all grown using the technique of molecular beam epitaxy (MBE). READ MORE
