Search for dissertations about: "LNA"

Showing result 1 - 5 of 73 swedish dissertations containing the word LNA.

  2. 1. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

    Author : Eunjung Cha; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

    Abstract : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. READ MORE

  4. 2. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

    Author : Joel Schleeh; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

    Abstract : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. READ MORE

  5. 3. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Author : Joel Schleeh; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Abstract : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. READ MORE

  6. 4. Microwave CMOS VCOs and Front-Ends - using integrated passives on-chip and on-carrier

    Author : Markus Törmänen; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; VCO; mixer; microwave; LNA; CMOS; front-end; System-on-Package;

    Abstract : The increasing demand for high data rates in wireless communication systems is increasing the requirements on the transceiver front-ends, as they are pushed to utilize more and wider bands at higher frequencies. The work in this thesis is focused on receiver front-ends composed of Low Noise Amplifiers (LNAs), Mixers, and Voltage Controlled Oscillators (VCOs) operating at microwave frequencies. READ MORE

  7. 5. Microwave CMOS LNAs and VCOs - Using Passives On-Chip, Above Chip, and Off-Chip

    Author : Lars Aspemyr; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; VCO; LNA; CMOS; Wafer-Level-Packaging; Ferro-electric varactor; System-on-Package;

    Abstract : The performance of LNAs and VCOs is of large importance to the complete wireless communications system. To achieve sufficient performance in microwave applications, LNAs and VCOs have therefore up to now mostly been manufactured in advanced and expensive semiconductor technologies. READ MORE