Search for dissertations about: "Lars-Åke Ragnarsson"

Found 3 swedish dissertations containing the words Lars-Åke Ragnarsson.

2. 1. Deposition of high quality thin dielectrics on silicon

   Author : Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxynitride; metal-oxide-semiconductor capacitors; RPECVD; silicon dioxide; interfaces; si-SiO2; remote plasma-enhanced CVD; ONO; C-V; nitrided interfaces; SiO2; deposited dielectrics;

   Abstract : .... READ MORE

4. 2. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization

   Author : Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; PMA; interface state densities; silicon; aluminum oxide; Pb; ultrathin; RPECVD; MOS;

   Abstract : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. READ MORE

5. 3. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology

   Author : Eugenio Dentoni Litta; Per-Erik Hellström; Mikael Östling; Lars-Åke Ragnarsson; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thulium; silicate; TmSiO; Tm2O3; interfacial layer; IL; CMOS; high-k; ALD; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. READ MORE