Search for dissertations about: "Low bandgap"

Showing result 1 - 5 of 116 swedish dissertations containing the words Low bandgap.

2. 1. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

   Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. READ MORE

4. 2. Wide Bandgap MMIC Technology

   Author : Mattias Sudow; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; AlGaN GaN; SiC MMIC; SiC MESFET; SiC Schottky; Microwave;

   Abstract : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. READ MORE

5. 3. Optimization of narrow bandgap HEMTs for low-noise and low-power applications

   Author : Mikael Malmkvist; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : .... READ MORE

6. 4. Surface analysis of low dimensional materials : revealing their electronic properties by advanced spectroscopy

   Author : Vladimir Miranda la Hera; Thomas Wågberg; Eduardo Gracia-Espino; Tomas Edvinsson; Umeå universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Low-dimensional materials; surface science; surface-sensitive techniques; angle-resolved photoemission spectroscopy; ultraviolet photoemission spectroscopy; electronic properties;

   Abstract : Low-dimensional materials (0D, 1D, 2D) have been widely used to develop modern miniaturized (micro- and nano-) technology. The use of these materials come from their extraordinary optical, electrical, thermal, and mechanical properties, which are very different from the bulk crystal. READ MORE

7. 5. Charge transport in III-V narrow bandgap semiconductor nanowires

   Author : Bekmurat Dalelkhan; NanoLund: Centre for Nanoscience; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InAs; InSb; InP-InAs; narrow bandgap; spin-orbit interaction; quantum dots; Nanowires; Fysicumarkivet A:2019:Dalelkhan;

   Abstract : This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires. According to the type of transport mechanism dominating in the devices, this thesis can be divided into four parts. READ MORE