Search for dissertations about: "MESFET"

Showing result 6 - 10 of 20 swedish dissertations containing the word MESFET.

  2. 6. Nonlinear transistor models for microwave and millimeterwave circuits

    Author : Lars Bengtsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; non-linear model; MESFET; volterra series; HBT; nonlinear simulation; HEMT; BJT; HFET; physical model; power spectrum measurement; harmonic balance;

    Abstract : .... READ MORE

  4. 7. Simulation and Optimization of SiC Field Effect Transistors

    Author : Kent Bertilsson; Hans-Erik Nilsson; Christian Brylinski; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiC; Device simulation; RF; power; MESFET; Elektronik; Electronics; Elektronik;

    Abstract : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. READ MORE

  5. 8. Simulation and Optimization of SiC Field Effect Transistors

    Author : Kent Bertilsson; Mittuniversitetet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFET; MESFET; Thermal Effects; Device modeling; Optimization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Abstract : .... READ MORE

  6. 9. Microwave FET Modeling and Applications

    Author : Christian Fager; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MESFET; uncertainty; model; FMCW; statistical; HEMT; small-signal; extraction; distortion; intermodulation; CMOS; LDMOS; power amplifier; estimation; FET; large-signal; radar; AM noise;

    Abstract : This thesis deals with three distinct topics within the areas of modeling, analysis and circuit design with microwave field effect transistors (FETs). First, the extraction of FET small-signal model parameters is addressed. READ MORE

  7. 10. Monte Carlo Simulations of Homogeneous and Inhomogeneous Transport in Silicon Carbide

    Author : Mats Hjelm; KTH; []
    Keywords : simulation; Monte Carlo; SiC; charge transport; MOSFET; MESFET;

    Abstract : The importance of simulation is increasing in the researchon semiconductor devices and materials. Simulations are used toexplore the characteristics of novel devices as well asproperties of the semiconductor materials that are underinvestigation, i.e. generally materials where the knowledge isinsufficient. READ MORE