Search for dissertations about: "MOCVD"

Showing result 16 - 20 of 23 swedish dissertations containing the word MOCVD.

  2. 16. Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs

    Author : Carl-Mikael Zetterling; KTH; []
    Keywords : ;

    Abstract : Silicon carbide (SIC) is a wide bandgap semiconductor thathas been suggested as a replacement for silicon in applicationsusing high voltages, high frequencies, high temperatures orcombinations thereof. Several basic process steps need to bedeveloped for reliable manufacturing of long-term stableelectronic devices. READ MORE

  4. 17. Epitaxial strategies for defect reduction in GaN for vertical power devices

    Author : Rosalia Delgado Carrascon; Vanya Darakchieva; Plamen Paskov; Peter Ramvall; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group-III nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wavelengths and covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. READ MORE

  5. 18. Optical and Structural Characterization of GaN Based Hybrid Structures and Nanorods

    Author : Mathias Forsberg; Galia Pozina; Ching-Lien Hsiao; Oleksandr Plashkevych; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : GaN belongs to the group III nitrides and is today the material of choice for efficient blue light emission, enabling solid state white lighting by combining red, blue and green light emitting diodes (LED) or by having a blue LED illuminating a phosphor. By combining GaN quantum well (QW) structures with colloids, nanoparticles or polyfluorene films, LEDs may be fabricate at lower cost. READ MORE

  6. 19. Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods

    Author : Alexandra Serban; Jens Birch; Ching-Lien Hsiao; Per Ola Åke Persson; Lars Hultman; Kimberly Thelander; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. READ MORE

  7. 20. Nanowires for Cell Research

    Author : Waldemar Hällström; Fasta tillståndets fysik; []
    Keywords : Nanotoxicology; Nanowires; Nanotubes; Nerve Cells; Cell Probing; Force Measurements; Nanotechnology; Axonal Guidance; Fysicumarkivet A:2010:Hällström;

    Abstract : This study explores the interaction between living biological cells and semiconductor nanowires. Biological cells are highly complex and dynamic entities, every one of them with individual characteristics and a high degree of internal and external communication. READ MORE