Search for dissertations about: "MOCVD"

Showing result 6 - 10 of 23 swedish dissertations containing the word MOCVD.

  2. 6. Aerosol Metal Nanoparticles and their Role in Particle-Assisted Growth of III–V Nanowires

    Author : Robert Hallberg; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; aerosol formation; III–V semiconductor materials; catalyst particles; Palladium nanoparticles; Gold nanoparticles; Spark discharge generation; MOVPE; MOCVD; Transmission electron microscopy TEM ; Phase stability; Nanoparticle deposition; Nanoparticle generation; nanoparticles characterization; Nanowire NW ; Nanowire growth;

    Abstract : Semiconductor nanowires have properties that make them potentially useful for applications in future electronic, photovoltaic, and optoelectronic devices. A powerful nanowire fabrication technique is the use of a nanoparticle as a preferential nucleation site, from which a nanowire grows. READ MORE

  4. 7. Growth Dynamics of Semiconductor Nanostructures by MOCVD

    Author : Kai Fu; Ying Fu; Lars-Erik Wernersson; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Growth dynamics; Monte Carlo; semiconductor quantum dot; Material physics with surface physics; Materialfysik med ytfysik;

    Abstract : Semiconductors and related low-dimensional nanostructures are extremely important in the modern world. They have been extensively studied and applied in industry/military areas such as ultraviolet optoelectronics, light emitting diodes, quantum-dot photodetectors and lasers. READ MORE

  5. 8. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

    Author : Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

    Abstract : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. READ MORE

  6. 9. Doping of high-Al-content AlGaN grown by MOCVD

    Author : Daniel Nilsson; Anelia Kakanakova- Georgieva; Erik Janzén; Michelle Moram; Linköpings universitet; []
    Keywords : ;

    Abstract : The high-Al-content AlxGa1-xN, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. READ MORE

  7. 10. MOCVD growth of GaN-based high electron mobility transistor structures

    Author : Jr-Tai Chen; Erik Janzén; Urban Forsberg; James S. Speck; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. READ MORE