Search for dissertations about: "MOLECULAR-BEAM"

Showing result 1 - 5 of 65 swedish dissertations containing the word MOLECULAR-BEAM.

  2. 1. Molecular Beam Studies of Ice Surface Properties

    Author : Martina Suter; Göteborgs universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Ice; surface; molecular beam; collision; dynamics; surface disorder; water condensation; helium; argon; carbon dioxide;

    Abstract : .... READ MORE

  4. 2. Molecular Beam Studies of Interactions Between Ice Surfaces and Atmospherically Relevant Molecules

    Author : Liza Romero Lejonthun; Göteborgs universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; molecular beam; surface; surface scattering; collision; water ice; ice; chlorine; nitrogen oxides; nitrogen monoxide; nitrogen dioxide; dinitrogen tetroxide; dinitrogen pentoxide; nitric acid; helium; graphite;

    Abstract : The discovery of the ozone hole over Antarctica in 1985 was one of the environmental issues that attracted most attention worldwide in the end of the last century. The cause of the ozone hole formation was proven to be coupled to the emission of chlorofluorocarbons (CFCs). READ MORE

  5. 3. Growth of ZnO/GaN distributed Bragg reflectors by plasma-assisted molecular beam epitaxy

    Author : David Adolph; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Oxides; GaN; distributed Bragg reflector; MBE; molecular beam epitaxy; ZnO; Nitrides; DBR;

    Abstract : This thesis describes epitaxial growth of ZnO/GaN distributed Bragg reflectors by hybrid plasma-assisted molecular beam epitaxy on GaN(0001). The unique hybrid approach employed the same growth chamber for continuous growth of both ZnO and GaN without exposing the layers to the ambient conditions. READ MORE

  6. 4. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Author : Stefan Davidsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE

  7. 5. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

    Author : Ming Zhao; Wei-Xin Ni; Göran Hansson; Kang L. Wang; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si SiGe; Strain engineering; Molecular beam epitaxy; THz; Quantum cascade; Strain relaxation; Materials science; Teknisk materialvetenskap;

    Abstract : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. READ MORE