Search for dissertations about: "MOS transistors"

Showing result 1 - 5 of 30 swedish dissertations containing the words MOS transistors.

  2. 1. Tunnel Emitter Transistors

    Author : Erik Aderstedt; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TET; tunneling; siO2< sub>; tunnel emitter transistor; MOS; Ta2< sub>O5< sub>; silicon; high- #954; BICFET; dielectrics;

    Abstract : The Tunnel Emitter Transistor is based on the modulation of the tunnel current in a Metal Oxide Semiconductor (MOS) structure with an ultra-thin oxide layer. The modulation is accomplished by injecting charge to the oxide-semiconductor interface from a third terminal. READ MORE

  4. 2. High Frequency Analysis of Silicon RF MOS Transistors

    Author : Johan Ankarcrona; Jörgen Olsson; Kjell Jeppson; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; RF-power; LDMOS; Microwave transistor; SOI; Silicon; MOSFET; Elektronik; Electronics; Elektronik;

    Abstract : Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. READ MORE

  5. 3. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    Author : Jun Wu; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE

  6. 4. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization

    Author : Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; PMA; interface state densities; silicon; aluminum oxide; Pb; ultrathin; RPECVD; MOS;

    Abstract : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. READ MORE

  7. 5. Performance and Energy Efficient Network-on-Chip Architectures

    Author : Sriram Vangal; Atila Alvandpour; Wim Dehaene; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Chips; MOS transistors; Network-on-Chip NoC ; process technology; FPMAC; Electrical engineering; Elektroteknik;

    Abstract : The scaling of MOS transistors into the nanometer regime opens the possibility for creating large Network-on-Chip (NoC) architectures containing hundreds of integrated processing elements with on-chip communication. NoC architectures, with structured on-chip networks are emerging as a scalable and modular solution to global communications within large systems-on-chip. READ MORE