Search for dissertations about: "MOSFET"

Showing result 1 - 5 of 56 swedish dissertations containing the word MOSFET.

  1. 1. Integration of metallic source/drain contacts in MOSFET technology

    University dissertation from Stockholm : KTH

    Author : Jun Luo; KTH.; [2010]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; NATURAL SCIENCES Physics Condensed matter physics Semiconductor physics; NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik;

    Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE

  2. 2. Engineering Multicomponent Nanostructures for MOSFET, Photonic Detector and Hybrid Solar Cell Applications

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Asghar Jamshidi Zavaraki; KTH.; [2015]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Epitaxial G rowth; Reduced Pressure Chemical Vapor Deposition; GeSnSiC; MOSFET; Photonic Detector; Resistivity; Phosp hor and Boron doping; Colloidal QDs Sensitized Solar Cell; Cd - free and Cd - based QDs; High Resolution Reciprocal Lattice Map; High Resolution X - Ray Diffraction; High Resolution Transmission Electron Microscopy; High resolution Scanning E lectron Microscopy .;

    Abstract : Silicon technologyhas been seekingfor a monolithic solution for a chip where data processing and data communication is performed in the CMOS part and the photonic component, respectively. Traditionally, silicon has been widely considered for electronic applications but not for photonic applications due to its indirect bandgap nature. READ MORE

  3. 3. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Erik Velander; KTH.; [2017]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE

  4. 4. Electron Tunneling and Field-Effect Devices in mm-Wave Circuits

    University dissertation from Lund University

    Author : Mikael Egard; Lunds universitet.; Lund University.; Lunds universitet.; Lund University.; [2012]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; negative differential conductance oscillator; resonant tunneling diode; ultra-wideband; impulse radio; Wavelet generator; MOSFET; nanowire; high frequency characterization; Fysicumarkivet A:2012:Egard;

    Abstract : Popular Abstract in Swedish Arbetet i denna avhandling berör elektroniska komponenter och hur de kan användas i kretsar för trådlös kommunikation. Den huvudsakliga slutsatsen av arbetet är att innovativa och icke konventionella komponenter kan bidra till att förbättra presentanda och minska effektförbrukningen i system för kommunikation på korta avstånd. READ MORE

  5. 5. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Jun Wu; Lunds universitet.; Lund University.; [2016]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : Popular Abstract in English Since 1947 when the first transistor was invented, electronics was transited into an unprecedented era. Different from a resistor that only has two terminals with the applied voltage and flowing current always obeying Ohm's law, a transistor has the third terminal in between, called "gate", which is made by, for metal-oxide-semiconductor field effect transistors (MOSFETs), an oxide layer sandwiched between the metal electrode and the semiconductor channel. READ MORE