Search for dissertations about: "MOSFET"

Showing result 11 - 15 of 86 swedish dissertations containing the word MOSFET.

2. 11. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

   Author : Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

   Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE

4. 12. Vertical InAs Nanowire Devices and RF Circuits

   Author : Martin Berg; Institutionen för elektro- och informationsteknik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; Metal-oxide-semiconductor field-effect transistor; Transistor; Vertical; InAs; III-V semiconductor; Nanowire; Fabrication; DC; Resistor; TLM; RF; Mixer; Circuit.;

   Abstract : Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been facilitated by scaling down the dimensions of the most important electronic component in modern electronics: the Si-based MOSFET. READ MORE

5. 13. Electrical Characterisation of III-V Nanowire MOSFETs

   Author : Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

   Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE

6. 14. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

   Author : Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

   Abstract : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. READ MORE

7. 15. Interaction of Ni with SiGe for electrical contacts in CMOS technology

   Author : Johan Seger; Shi-Li Zhang; Christian Lavoie; KTH; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Physics; MOSFET; NiSi; SiGe; phase formation; morphological stability; Fysik; Physics; Fysik;

   Abstract : This thesis investigates the reactive formation of Ni mono-gernanosilicide, NiSi1-uGeu, for contact metallization of future CMOS devices where Si1-xGex can be present in the gate, source and drain of a MOSFET. Although the investigation has been pursued with a strong focus on materials aspects, issues related to process integration in MOSFETs both on conventional bulk Si and ultra-thin body SOI have been taken into consideration. READ MORE