Search for dissertations about: "MOSFET"
Showing result 6 - 10 of 86 swedish dissertations containing the word MOSFET.
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6. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters
Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE
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7. Electron Tunneling and Field-Effect Devices in mm-Wave Circuits
Abstract : Short high-frequency electromagnetic pulses, also referred to as wavelets, are considered for use in various short-range impulse based ultra-wideband applications, such as communication, imaging, radar, spectroscopy, and localization. This thesis investigates field-effect and tunneling based semiconductor devices and their operation in millimeter-wave (mm-wave) impulse transceivers. READ MORE
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8. Vertical III-V Nanowires For In-Memory Computing
Abstract : In recent times, deep neural networks (DNNs) have demonstrated great potential in various machine learning applications,such as image classification and object detection for autonomous driving. However, increasing the accuracy of DNNsrequires scaled, faster, and more energy-efficient hardware, which is limited by the von Neumann architecture whereseparate memory and computing units lead to a bottleneck in performance. READ MORE
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9. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE
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10. Advanced TCAD Simulations and Characterization of Semiconductor Devices
Abstract : Today, micro- and nano-electronic devices are becoming more complex and advanced as the dimensions are shrinking. It is therefore a very challenging task to develop new device technologies with performance that can be predicted. READ MORE
