Search for dissertations about: "MOSFETs"

Showing result 1 - 5 of 61 swedish dissertations containing the word MOSFETs.

  1. 1. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

    Author : Romain Esteve; Carl-Mikael Zetterling; Tsunenobu Kimoto; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; SiC; MOSFETs; Fabrication; Characterization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. READ MORE

  2. 2. Vertical III-V Nanowire MOSFETs

    Author : Olli-Pekka Kilpi; Nanoelektronik; []
    Keywords : Nanowire; MOSFET; III-V; InGaAs; Vertical; Heterostructure; High frequency;

    Abstract : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. READ MORE

  3. 3. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

    Author : Juan Colmenares; Hans-Peter Nee; Leon M. Tolbert; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Gallium Nitride; Gate Driver; Harsh Environments; High Efficiency Converter; High Temperature; MOSFETs; Normally- ON JFETs; Reliability; Silicon Carbide; Wide-Band Gap Semiconductors; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. READ MORE

  4. 4. Numerical studies of devices in Si and SiC : submicron MOSFETs and photon detectors

    Author : Ervin Dubaric; KTH; []
    Keywords : ;

    Abstract : .... READ MORE

  5. 5. Electrical Characterisation of III-V Nanowire MOSFETs

    Author : Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

    Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE