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Showing result 1 - 5 of 73 swedish dissertations matching the above criteria.

2. 1. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

   Author : Romain Esteve; Carl-Mikael Zetterling; Tsunenobu Kimoto; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFETs; Fabrication; Characterization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Abstract : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. READ MORE

4. 2. Radio Frequency InGaAs MOSFETs

   Author : Navya Sri Garigapati; NanoLund: Centre for Nanoscience; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V compound semiconductor; InGaAs MOSFET; Quantum well; Nanowire; Radio Frequency; Band structure calculation; k.p calculations; Strain engineering; ballistic electron transport; S-parameters;

   Abstract : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. READ MORE

5. 3. Vertical III-V Nanowire MOSFETs

   Author : Olli-Pekka Kilpi; Nanoelektronik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; III-V; InGaAs; Vertical; Heterostructure; High frequency;

   Abstract : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. READ MORE

6. 4. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

   Author : Juan Colmenares; Hans-Peter Nee; Leon M. Tolbert; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Gallium Nitride; Gate Driver; Harsh Environments; High Efficiency Converter; High Temperature; MOSFETs; Normally- ON JFETs; Reliability; Silicon Carbide; Wide-Band Gap Semiconductors; Electrical Engineering; Elektro- och systemteknik;

   Abstract : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. READ MORE

7. 5. Numerical studies of devices in Si and SiC : submicron MOSFETs and photon detectors

   Author : Ervin Dubaric; KTH; []
   Keywords : ;

   Abstract : .... READ MORE