Search for dissertations about: "MOSFETs"
Showing result 21 - 25 of 73 swedish dissertations containing the word MOSFETs.
-
21. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors
Abstract : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. READ MORE
-
22. Low-Power Nanowire Circuits and Transistors
Abstract : This thesis explores several novel material systems and innovative device concepts enabled by nanowire technology. State-of-the-art fabrication techniques such as electron beam lithography and atomic layer deposition are utilized to achieve high control and quality in the device fabrication. READ MORE
-
23. High Speed (MHz) Switch Mode Power Supplies (SMPS) using Coreless PCB Transformer Technology
Abstract : The most essential unit required for all the electronic devices is the Power Supply Unit (PSU). The main objective of power supply designers is to reduce the size, cost and weight, and to increase the power density of the converter. READ MORE
-
24. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs
Abstract : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. READ MORE
-
25. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective
Abstract : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. READ MORE