Search for dissertations about: "MOSFETs"

Showing result 6 - 10 of 73 swedish dissertations containing the word MOSFETs.

2. 6. Electrical Characterisation of III-V Nanowire MOSFETs

   Author : Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

   Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE

4. 7. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

   Author : Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

   Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE

5. 8. III-V MOSFETs for High-Frequency and Digital Applications

   Author : Cezar Zota; Nanoelektronik; []
   Keywords : III-V; MOSFET; Transistor;

   Abstract : III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. READ MORE

6. 9. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

   Author : Adam Jönsson; Nanoelektronik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

   Abstract : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. READ MORE

7. 10. Application of SiGe(C) in high performance MOSFETs and infrared detectors

   Author : Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Abstract : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. READ MORE