Search for dissertations about: "MOVPE"
Showing result 21 - 25 of 33 swedish dissertations containing the word MOVPE.
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21. Doping of Semiconductor Nanowires
Abstract : In this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. READ MORE
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22. Block Copolymer Lithography. Applications for Sub-50 nm High-Density Nanostructures
Abstract : As high technology device functionalities seem to constantly be moving towards decreasing critical dimensions and increasing density, there is a need for lithography research to move in the same direction. Block copolymer (BCP) lithography is a promising technique, which has single-digit nanometer resolution, typically has a pattern periodicity of 10-50 nm, and easily scales up the patterned area at a low cost. READ MORE
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23. III-V Nanowire Solar Cells: Growth and Characterization
Abstract : To mitigate dangerous climate change, a transition to a new and sustainable energy system is needed. In this system, solar energy will need to be a key player. Prices of electricity made from solar cells have declined rapidly over the recent decades, making solar energy competitive in more markets. READ MORE
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24. Design and fabrication of multiple quantum well structures for long wavelength laser diodes
Abstract : InGaAsP multiple quantum well (MQW) structures emitting at1300 nm have been designed, fabricated with metal organicvapour phase epitaxy (MOVPE) and evaluated by x-ray diffraction(XRD), photoluminescence (PL) and by laser characterisation. Inaddition the structures were subject to scanning probemicroscopy (STM/AFM) and direct carrier transport measurements. READ MORE
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25. Epitaxial Growth and Design of Nanowires and Complex Nanostructures
Abstract : This thesis describes the epitaxial growth of III-V semiconductor nanowires using Au seed particles, and the design of more complex three-dimensional branched structures from these wires. Growth was performed by metallorganic vapour phase epitaxy, in which precursor molecules for the semiconductor material components are introduced in a low-pressure vapour. READ MORE