Search for dissertations about: "Magnetron Sputter Epitaxy MSE"
Found 4 swedish dissertations containing the words Magnetron Sputter Epitaxy MSE.
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1. Magnetron Sputter Epitaxy of GaN
Abstract : Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. READ MORE
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2. Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods
Abstract : In this research, electronic-grade GaN(0001) epilayers and nanorods have been grown onto Al2O3(0001) and Si(111) substrates, respectively, by reactive magnetron sputter epitaxy (MSE) using liquid Ga as a sputtering target. MSE, employing ultra high vacuum conditions, high-purity source materials, and lowenergy ion assisted deposition from substrate biasing, is a scalable method, lending itself to large area GaN synthesis. READ MORE
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3. Magnetron sputter epitaxy of 2h-Al1-xInxN thin films
Abstract : This thesis describes the growth and structural characterization of epitaxial 2h A11-xInxN ranging from pure A1N to InN [01-xInxN films were synthesized by dual DC reactive Magnetron Sputter Epitaxy (MSE) in an ultra-high vacuum (UHV) system. Growth parameters such as deposition temperature and magnetron power settings were adjusted in order to control the film stoichiometry. READ MORE
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4. Growth and Characterization of Metastable Wide Band-Gap Al1-xInxN Epilayers
Abstract : InN to 6.2 eV for AlN, which opens possibilities to engineer opto-electronic devices operating from infra-red to deep ultra-violet wavelengths. Al1-xInxN with the alloy composition x~0.2 can also be used as a lattice-matched electron confinement layer for GaN based electronic devices. READ MORE
