Search for dissertations about: "Martin Fagerlind"
Found 2 swedish dissertations containing the words Martin Fagerlind.
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1. Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs
Abstract : The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. READ MORE
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2. Methods for Characterization and Optimization of AlGaN/GaN HEMT Surface Passivation
Abstract : The Gallium Nitride based high electron mobility transistor is rapidly improving and is emerging as a viable alternative for use in high power applications operating in the microwave frequency domain. The suitability of the AlGaN/GaN material system is due to the possibility to grow epitaxial heterostructures that provide; high electron mobility, high electron saturation velocity, high carrier density and a high dielectric breakdown field. READ MORE