Search for dissertations about: "Microwave Breakdown: Physics and Applications"

Found 4 swedish dissertations containing the words Microwave Breakdown: Physics and Applications.

2. 1. Microwave Breakdown: Physics and Applications

   Author : Ulf Jordan; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; resonators; breakdown plasma; waveguides; microwave breakdown; metal wedges; HPM protection;

   Abstract : Theories for microwave breakdown in gases, with emphasis on Air, are presented in this thesis. Underlying physical processes are described together with models suitable for scientific research and technical development. READ MORE

4. 2. Microwave breakdown : physics and applications

   Author : Ulf Jordan; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; breakdown plasmas; resonators; waveguides; microwave breakdown;

   Abstract : .... READ MORE

5. 3. Microwave Breakdown in Inhomogeneous Fields

   Author : Joel Rasch; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; corona; inhomogeneous fields; Microwave breakdown; multipactor;

   Abstract : Microwave breakdown continues to be a risk in many applications involving the transmission and reception of microwave frequency signals. Satellite communication is especially interesting from the research point of view because of the extreme costs, and limited testing possibilities. READ MORE

6. 4. Methods for Characterization and Optimization of AlGaN/GaN HEMT Surface Passivation

   Author : Martin Fagerlind; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; surface states; surface passivation; annealing; processing; AlGaN GaN HEMT; MIS-capacitor;

   Abstract : The Gallium Nitride based high electron mobility transistor is rapidly improving and is emerging as a viable alternative for use in high power applications operating in the microwave frequency domain. The suitability of the AlGaN/GaN material system is due to the possibility to grow epitaxial heterostructures that provide; high electron mobility, high electron saturation velocity, high carrier density and a high dielectric breakdown field. READ MORE