Search for dissertations about: "Mikael Östling"
Showing result 11 - 15 of 23 swedish dissertations containing the words Mikael Östling.
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11. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration
Abstract : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. READ MORE
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12. Source and drain engineering in SiGe-based pMOS transistors
Abstract : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. READ MORE
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13. Silicon nanowire based devices for More than Moore Applications
Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE
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14. Thermally stable electrical contacts to 6H silicon carbide
Abstract : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform. Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. READ MORE
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15. Integration of metallic source/drain contacts in MOSFET technology
Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE