Search for dissertations about: "Mikael Östling"

Showing result 6 - 10 of 23 swedish dissertations containing the words Mikael Östling.

  2. 6. Germanium layer transfer and device fabrication for monolithic 3D integration

    Author : Ahmad Abedin; Mikael Östling; Cor Claeys; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Monolithic; sequential; 3D; silicon; germanium; wafer bonding; etch back; germanium on insulator; GOI; Ge pFET; low temperature; Sipassivation; pn junction; Kisel; germanium; epitaxi; selektiv; pn-övergång; germanium påisolator; GOI; Ge PFET; bonding; monolitisk; sekventiell; tre dimensionell; 3D; lågtemperarad;

    Abstract : Monolithic three-dimensional (M3D) integration, it has been proposed,can overcome the limitations of further circuits’ performance improvementand functionality expansion. The emergence of the internet of things (IoT) isdriving the semiconductor industry toward the fabrication of higher-performancecircuits with diverse functionality. READ MORE

  4. 7. Fabrication of Group IV Semiconductors on Insulator for Monolithic 3D Integration

    Author : Ali Asadollahi; Mikael Östling; Paul R. Berger; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; monolithic three dimensional M3D integration; strained germanium on insulator sGeOI pMOSFETs; silicon silicon-germanium on insulator sSOI sSiGeOI nMOSFETs; Si0.5Ge0.5 strain-relaxed buffer SRB ; direct bonding; chemical mechanical polishing CMP ; compressively strained GeOI; tensile strained Si0.5Ge0.5OI;

    Abstract : The conventional 2D geometrical scaling of transistors is now facing many challenges in order to continue the performance enhancement while decreasing power consumption. The decrease in the device power consumption is related to the scaling of the power supply voltage (Vdd) and interconnects wiring length. READ MORE

  5. 8. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Author : Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. READ MORE

  6. 9. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology

    Author : Eugenio Dentoni Litta; Per-Erik Hellström; Mikael Östling; Lars-Åke Ragnarsson; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thulium; silicate; TmSiO; Tm2O3; interfacial layer; IL; CMOS; high-k; ALD; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. READ MORE

  7. 10. Microwave Frequency Stability and Spin Wave Mode Structure in Nano-Contact Spin Torque Oscillators

    Author : Anders Eklund; B. Gunnar Malm; Johan Åkerman; Mikael Östling; Erik Wahlström; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; spintronics; microwave oscillators; magnetization dynamics; spin waves; phase noise; device modelling; electrical characterization; X-ray microscopy; STXM; XMCD; Fysik; Physics; Electrical Engineering; Elektro- och systemteknik;

    Abstract : The nano-contact spin torque oscillator (NC-STO) is an emerging device for highly tunable microwave frequency generation in the range from 0.1 GHz to above 65 GHz with an on-chip footprint on the scale of a few μm. READ MORE