Search for dissertations about: "Minority Carrier Transient Spectroscopy"

Showing result 1 - 5 of 6 swedish dissertations containing the words Minority Carrier Transient Spectroscopy.

2. 1. Growth and characterization of SiC and GaN

   Author : Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

   Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE

4. 2. Carrier Lifetime Relevant Deep Levels in SiC

   Author : Ian Don Booker; Einar Sveinbjörnsson; Erik Janzén; Anthony Peaker; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Silicon carbide; Deep level transient spectroscopy; Deep level; Carrier lifetime; Time-resolved photoluminescence;

   Abstract : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. READ MORE

5. 3. Electrically active defects in 4H silicon carbide

   Author : Liutauras Storasta; Tsunenobu Kimoto; Linköpings universitet; []
   Keywords : ;

   Abstract : Development of future technology needs to widen the application areas of semiconductor devices. The increased requirements are beyond the limits of the most common semiconductors today like silicon or gallium arsenide. Use of new materials could resolve many performance issues and also offer increased reliability and reduced cost of the devices. READ MORE

6. 4. Deep levels in SiC

   Author : Franziska C. Beyer; Erik Janzén; Carl Hemmingsson; Jörg Weber; Linköpings universitet; []
   Keywords : NATURAL SCIENCES; NATURVETENSKAP;

   Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE

7. 5. Electronic properties of intrinsic defects and impurities in GaN

   Author : Tran Thien Duc; Carl Hemmingsson; Galia Pozina; Erik Janzén; Walter Meyer; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. READ MORE