Search for dissertations about: "Niklas Rorsman"

Found 3 swedish dissertations containing the words Niklas Rorsman.

  1. 1. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

    Author : Niklas Rorsman; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; subharmonic; resistive mixer; Modulation Doped Field Effect Transistor MODFET ; heterostructure field effect transistor HFET ; monolithic microwave integrated circuits MMIC ; frequency multiplier; amplifier; III-V semiconductor; small signal model; electron beam lithography; High Electron Mobility Transistor HEMT ; large signal model; pseudomorphic;

    Abstract : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. READ MORE

  2. 2. Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications

    Author : Luigia Lanni; Carl-Mikael Zetterling; Niklas Rorsman; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. READ MORE

  3. 3. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    Author : Katarina Smedfors; Carl-Mikael Zetterling; Niklas Rorsman; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. READ MORE