Search for dissertations about: "Optimering på låg nivå"

Showing result 1 - 5 of 8 swedish dissertations containing the words Optimering på låg nivå.

2. 1. Realizing Low-Latency Internet Services via Low-Level Optimization of NFV Service Chains : Every nanosecond counts!

   Author : Alireza Farshin; Dejan Kostic; Gerald Q. Maguire Jr.; Babak Falsafi; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-latency Internet services; Network Function Virtualization; Low-level Optimization; Superoptimization; Last Level Cache; Internettjänster med låg fördröjning; Virtualisering av nätverksfunktioner; Optimering på låg nivå; Superoptimering; Sista-nivåns cache; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : By virtue of the recent technological developments in cloud computing, more applications are deployed in a cloud. Among these modern cloud-based applications, some require bounded and predictable low-latency responses. READ MORE

4. 2. Exploring spatial and temporal resolution in energy systems modelling : a model-based analysis focused on the developing electricity systems

   Author : Nandi Moksnes; Viktoria Martin; Mark I. Howells; William Usher; Holger Rogner; Hannah Daly; KTH; []
   Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Energy system optimisation modelling; Global sensitivity analysis; Robust decision methods; Geospatial electrification model; SDG7; SDG13.; Energisystem; optimering; energimodellering; Global känslighetsanalys; Robust decision methods; geospatial elektrifieringsmodell; Globala mål 7; Globala mål 13; Energiteknik; Energy Technology;

   Abstract : The energy system is undergoing a transition in many parts of the world with this transition being driven by several factors such as climate change, and economic and social development. Agenda 2030, with its 17 Sustainable Development Goals (SDGs), has set the direction on where development should be focussed. READ MORE

5. 3. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

   Author : Erik Velander; Hans-Peter Nee; Francesco Iannuzzo; KTH; []
   Keywords : Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

   Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE

6. 4. Optimization of Low-Level Controllers and High-Level Polymer Grade Changes

   Author : Per-Ola Larsson; Institutionen för reglerteknik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; process control; PID control; robustness; noise sensitivity; dynamic optimization; polymerization; Modelica;

   Abstract : Two design problems at different levels in the control hierarchy are considered; optimization of robust low-level controllers with constrained control signal activity and optimization of economical high-level polyethylene grade changes. As for the first design problem, a constraint on control signal activity due to measurement noise is presented and used when optimizing and comparing PI/PID controllers with measurement filters of different orders. READ MORE

7. 5. Advances in SiC growth using chloride-based CVD

   Author : Stefano Leone; Anne Henry; Erik Janzén; Calvin H. Jr Carter; Linköpings universitet; []
   Keywords : NATURAL SCIENCES; NATURVETENSKAP;

   Abstract : Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. READ MORE