Search for dissertations about: "Oxide layer"

Showing result 1 - 5 of 410 swedish dissertations containing the words Oxide layer.

  2. 1. Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates

    Author : Tobias Törndahl; Jan-Otto Carlsson; Karin Larsson; Mikael Ottosson; Lauri Niinistö; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; Atomic Layer Deposition; ALD; copper; copper I oxide; copper I nitride; deposition pathway; CuCl; Cu hfac 2; oxide substrates; epitaxy; DFT; ab-initio; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi;

    Abstract : Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. READ MORE

  4. 2. Properties and applications of materials based on graphite oxide

    Author : Andreas Nordenström; Aleksandr V. Talyzin; Thomas Wågberg; Andrey Turchanin; Umeå universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Graphene; Graphite Oxide; Graphene Oxide; Swelling; Phase Transition; Intercalation; Activated Graphene; Activated Carbon; Supercapacitors; Neutron Reflectometry;

    Abstract : Graphite oxide (GO) is a hydrophilic, layered material prepared by oxidation of graphite. In the first part of this thesis, we studied materials produced from GO by intercalation and functionalization. The second part of the thesis was focused on supercapacitor applications of high surface area carbons prepared from GO using chemical activation. READ MORE

  5. 3. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications

    Author : Katarina Forsgren; Steven George; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemistry; CVD; ALD; Dielectric constant; Tantalum oxide; Ta2O5; Zirconium oxide; ZrO2; Hafnium oxide; HfO2; QCM; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. READ MORE

  6. 4. Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides

    Author : Jonas Sundqvist; Anders Hårsta; Roy Gordon; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; CVD; ALD; tantalum oxide; hafnium oxide; tin oxide; epitaxy; Ta2O5; HfO2; SnO2; XRD; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Abstract : Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. READ MORE

  7. 5. Metal Oxide Thin Films and Nanostructures Made by ALD

    Author : Mårten Rooth; Anders Hårsta; Jan-Otto Carlsson; Lauri Niinisö; Uppsala universitet; []
    Keywords : Inorganic chemistry; Atomic layer deposition; Metal oxide; Nanostructures; Template deposition; Thin films; Oorganisk kemi;

    Abstract : Thin films of cobalt oxide, iron oxide and niobium oxide, and nanostructured thin films of iron oxide, titanium oxide and multilayered iron oxide/titanium oxide have been deposited by Atomic Layer Deposition (ALD). The metal oxides were grown using the precursor combinations CoI2/O2, Fe(Cp)2/O2, NbI5/O2 and TiI4/H2O. READ MORE