Search for dissertations about: "P-i-n diodes"

Showing result 1 - 5 of 6 swedish dissertations containing the words P-i-n diodes.

  1. 1. Photo diodes for machine vision : device characteristics and a-Si:H deposition and analysis

    University dissertation from Linköping : Linköping studies in science and technology

    Author : Annika Rantzer; Marcus Böhm; [2003]

    Abstract : During the last years the area of digital cameras based on CMOS technology has grown rapidly. In CMOS, signal processing circuitry and sensor elements can be combined on the same chip, which has resulted in advanced machine vision chip designs. READ MORE

  2. 2. Electrical and Optical Properties of AlGaAs/GaAs Aperiodic Superlattices and Resonant Tunneling Diodes. Theory, Design and Applications

    University dissertation from Linköping : Linköping studies in science and technology

    Author : Simon Mang Cao; [1997]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; exciton-assisted transport; miniband; high-speed quantum electronics; optical properties; ultrafast optoelectronics; field-induced transport; irregular superlattices; nanometer-scale heterostructures; laser diodes; resonant tunneling;

    Abstract : The objective of the work presented in this thesis is to study quantum transport and optical properties of aperiodic superlattices and resonant tunneling diodes using III-V semiconductor heterostructures grown by molecular beam epitaxy. The study follows a procedure of theoretical modeling, computer-aided design and simulation, sample growth, and measurements. READ MORE

  3. 3. Junction Engineering in Nanostructured Optoelectronic Devices

    University dissertation from Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden

    Author : Ali Nowzari; [2018-09-18]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; Solar cell; Photodetector; Light Emitting Diode; Doping Evaluation; Fysicumarkivet A:2018:Nowzari;

    Abstract : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. READ MORE

  4. 4. Doping of Semiconductor Nanowires

    University dissertation from Lund University

    Author : Jesper Wallentin; [2012]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; metal-organic vapour phase epitaxy; III-V semiconductor materials; nanowires; doping; solar cells; F:2013:Wallentin;

    Abstract : In this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. READ MORE

  5. 5. Investigation of GaAs structures for microstrip detectors

    University dissertation from Stockholm : Fysik

    Author : Valery Chmill; [2003]
    Keywords : ;

    Abstract : The performance of Gallium Arsenide p-i-n detectors afterneutron irradiation has been studied. The detectors have beenirradiated with » 6 MeV neutrons at various neutronfluences up to approximately 6 ¢ 1014 n/cm2, protons andmixed beam up to 1015 p/cm2. READ MORE