Search for dissertations about: "P-i-n diodes"

Showing result 1 - 5 of 6 swedish dissertations containing the words P-i-n diodes.

  1. 1. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Erik Velander; KTH.; [2017]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE

  2. 2. Photo diodes for machine vision : device characteristics and a-Si:H deposition and analysis

    University dissertation from Linköping : Linköping studies in science and technology

    Author : Annika Rantzer; Linköpings universitet.; Linköpings universitet.; [2003]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TECHNOLOGY; TEKNIKVETENSKAP;

    Abstract : During the last years the area of digital cameras based on CMOS technology has grown rapidly. In CMOS, signal processing circuitry and sensor elements can be combined on the same chip, which has resulted in advanced machine vision chip designs. READ MORE

  3. 3. Junction Engineering in Nanostructured Optoelectronic Devices

    University dissertation from Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden

    Author : Ali Nowzari; Lunds universitet.; Lund University.; Lunds universitet.; Lund University.; [2018-09-18]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; Solar cell; Photodetector; Light Emitting Diode; Doping Evaluation; Fysicumarkivet A:2018:Nowzari;

    Abstract : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. READ MORE

  4. 4. Doping of Semiconductor Nanowires

    University dissertation from Lund University

    Author : Jesper Wallentin; Lunds universitet.; Lund University.; Lunds universitet.; Lund University.; [2012]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; metal-organic vapour phase epitaxy; III-V semiconductor materials; nanowires; doping; solar cells; F:2013:Wallentin;

    Abstract : Popular Abstract in Swedish Vi människor konsumerar en ständigt ökande mängd elektrisk energi, som till största delen produceras av ändligt tillgängliga material som kol, gas, olja och uran. Elproduktionen har många skadliga bieffekter, som till exempel utsläpp av växthusgasen koldioxid vid förbränning av kol, gas och olja. READ MORE

  5. 5. Investigation of GaAs structures for microstrip detectors

    University dissertation from Stockholm : Fysik

    Author : Valery Chmill; KTH.; [2003]
    Keywords : ;

    Abstract : The performance of Gallium Arsenide p-i-n detectors afterneutron irradiation has been studied. The detectors have beenirradiated with » 6 MeV neutrons at various neutronfluences up to approximately 6 ¢ 1014 n/cm2, protons andmixed beam up to 1015 p/cm2. READ MORE