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Showing result 1 - 5 of 9 swedish dissertations matching the above criteria.
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1. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters
Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE
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2. Photo diodes for machine vision : device characteristics and a-Si:H deposition and analysis
Abstract : During the last years the area of digital cameras based on CMOS technology has grown rapidly. In CMOS, signal processing circuitry and sensor elements can be combined on the same chip, which has resulted in advanced machine vision chip designs. READ MORE
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3. Electrical and Optical Properties of AlGaAs/GaAs Aperiodic Superlattices and Resonant Tunneling Diodes. Theory, Design and Applications
Abstract : The objective of the work presented in this thesis is to study quantum transport and optical properties of aperiodic superlattices and resonant tunneling diodes using III-V semiconductor heterostructures grown by molecular beam epitaxy. The study follows a procedure of theoretical modeling, computer-aided design and simulation, sample growth, and measurements. READ MORE
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4. Junction Engineering in Nanostructured Optoelectronic Devices
Abstract : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. READ MORE
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5. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures
Abstract : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. READ MORE