Search for dissertations about: "P. Shi"
Showing result 1 - 5 of 7 swedish dissertations containing the words P. Shi.
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1. Regulation of signaling molecules in sensory neurons and spinal cord : studies on nerve injury models and transgenic mice
Abstract : Nerve injury may cause neuropathic pain in patients. Similar symptoms can also be seen in some animal models. READ MORE
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2. Growth of 3C-SiC and Graphene for Solar Water-Splitting Application
Abstract : Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H- or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si–C bilayers along the c-axis crystal direction. READ MORE
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3. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs
Abstract : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. READ MORE
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4. Integration of metallic source/drain contacts in MOSFET technology
Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE
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5. Interaction of Ni with SiGe for electrical contacts in CMOS technology
Abstract : This thesis investigates the reactive formation of Ni mono-gernanosilicide, NiSi1-uGeu, for contact metallization of future CMOS devices where Si1-xGex can be present in the gate, source and drain of a MOSFET. Although the investigation has been pursued with a strong focus on materials aspects, issues related to process integration in MOSFETs both on conventional bulk Si and ultra-thin body SOI have been taken into consideration. READ MORE
