Search for dissertations about: "Per Olof Holtz"
Showing result 1 - 5 of 12 swedish dissertations containing the words Per Olof Holtz.
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1. Optical characterization of Silicon-based self-assembled nanostructures
Abstract : This PhD thesis summarizes the work carried on the optical characterizations of some Si-based self-assembled nanostructures, particularly SiGe/Si quantum dots (QDs) and nanocrystalline (nc)-Si embedded in mesoporous silica (MS) using photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. The spectroscopic studies of SiGe/Si QDs grown on Si by molecular beam epitaxy revealed for the first time well-resolved PLE resonances. READ MORE
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2. Polarization-resolved photoluminescence spectroscopy of III-nitride quantum dots
Abstract : In this thesis, results from studies on (In)GaN quantum dots (QDs) are presented, including investigations of the structural, optical and electronic properties. The experimental studies were performed on GaN and InGaN QDs grown by molecular beam epitaxy, taking advantage of the Stranki-Krastanov growth mode for the GaN QD samples and the composition segregation for the InGaN QD samples. READ MORE
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3. Few particle effects in pyramidal quantum dots - a spectroscopic study
Abstract : In this thesis two very similar processes have been studied, both involving excitations of particles during recombination of exciton complexes in quantum dots, reducing the energy of the emitted photon. Different exciton complexes are defined according to the number of electrons and holes in the quantum dot upon recombination. READ MORE
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4. Spectroscopy studies of few particle effects in pyramidal quantum dots
Abstract : In this thesis work two very similar processes have been studied both involving excitations of particles during recombination of exciton complexes in quantum dots, reducing the energy of the emitted photon. Different exciton complexes are defined according to the number of electrons and holes in the quantum dot upon recombination. READ MORE
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5. MBE growth of Si-based heterostructures for optoelectronic applications
Abstract : Molecular beam epitaxy (MBE) is a powerful technique used to grow semiconductor crystalline Jayers at low (200°C - 900 °C) temperature. In this study we report on the growth of silicon-based materials used for their electronic and optical properties. Parts of the work have involved alloys of silicon (Si) with germanium (Ge) or carbon (C). READ MORE