Advanced search

Found 3 swedish dissertations matching the above criteria.

2. 1. On high-frequency soft-switching DC-converters for high-voltage applications

   Author : Per Ranstad; KTH; []
   Keywords : soft-switching; dc-converter; high-frequency; high-voltage;

   Abstract : .... READ MORE

4. 2. Control and Design Aspects of Components and Systems in High-Voltage Converters for Industrial Applications

   Author : Per Ranstad; Hans-Peter Nee; Alfred Rufer; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; High-voltage converter; resonant converter; high-voltage transformer; transformer parasitics; IGBT; soft-switching; control; Electric power engineering; Elkraftteknik;

   Abstract : High-frequency dc-dc converters are widely used in power electronic applications, both in consumer products and industrial products. By operating the converter at higher frequencies both a smaller size and better control characteristics can be obtained. READ MORE

5. 3. On Reliability of SiC Power Devices in Power Electronics

   Author : Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

   Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE