Search for dissertations about: "Polytypism"

Showing result 1 - 5 of 7 swedish dissertations containing the word Polytypism.

  2. 1. Optical Studies of Polytypism in GaAs Nanowires

    Author : Neimantas Vainorius; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Photoluminescence; Raman scattering; Polytypism; Quantum confinement; GaAs nanowires; Fysicumarkivet A:2017:Vainorius;

    Abstract : Semiconductor nanowires are often regarded as having potential to be building blocks for novel applications. Their geometry allows defect-free combinations of materials that have a high degree of lattice mismatch. III-V semiconductor nanowires can also be grown in the wurtzite crystal phase, which is not stable in bulk material or thin films. READ MORE

  4. 2. The Crystal Structure of III-V Semiconductor Nanowires: Growth and Characterization

    Author : Jessica Bolinsson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; metal-organic vapour phase epitaxy; MOVPE; scanning tunneling microscopy; cathodoluminescence; XSTM; crystal structure; polytypism; III-V semiconductor materials; nanowires; Fysicumarkivet A:2010:Bolinsson;

    Abstract : This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semiconductor materials (III-V NWs). The nanowires were grown using metal-organic vapour phase epitaxy (MOVPE) and characterized by various microscopy techniques. READ MORE

  5. 3. Transmission Electron Microscopy of Nanowires: Influence of Doping and Etching on Polytypism in InP

    Author : Martin Ek; Centrum för analys och syntes; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Semiconductor nanowires have many properties which makes them interesting for future electronic devices. The fact that they have very small diameters allow them to combine different III-V materials into heterostructures, and makes it possible to grow them on Si substrates which are the basis of nearly all current semiconductor technology. READ MORE

  6. 4. Thermodynamic modelling of composition and crystal structure of ternary nanowires

    Author : Egor Leshchenko; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : An analytic expression for the composition of a ternary solid material nucleating from a quaternary liquid melt has been derived. This theory has been applied to Au-catalyzed and self-catalyzed, nucleation limited VLS growth of ternary III-V nanowires. READ MORE

  7. 5. CVD growth of SiC for high-power and high-frequency applications

    Author : Robin Karhu; Jawad ul-Hassan; Einar Sveinbjörnsson; Burk Albert; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. READ MORE