Search for dissertations about: "Power Module"

Showing result 6 - 10 of 75 swedish dissertations containing the words Power Module.

  2. 6. On Reliability of SiC Power Devices in Power Electronics

    Author : Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE

  4. 7. Multi-Gigabaud Solutions for Millimeter-wave Communication

    Author : Sining An; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Millimeter-wave communication; power amplifier; mobile network; power combining; outphasing; high order modulation; DQPSK; modem; pilot; 16-QAM; non-linear distortion; E-band; high data rate; carrier recovery;

    Abstract : With the growing number of mobile network and internet services subscriptions, faster communication will provide a better experience for users. In the next generation mobile network, the fifth generation (5G), communication data rate will achieve several Gigabits per second with ultra-low latency. READ MORE

  5. 8. Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems

    Author : Ahsan-Ullah Kashif; Qamar-ul Wahab; Christer Svensson; Joachim Wurfl; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; RF-LDMOS; power amplifiers; technology CAD; load-pull; non-linear analysis; and switching analysis; Semiconductor physics; Halvledarfysik;

    Abstract : The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. READ MORE

  6. 9. On integrity assessment of IGBT-based power stacks used in magnet power supplies for particle accelerators

    Author : Panagiotis Asimakopoulos; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : This thesis analyses an electrical testing method for assessing the integrity of an IGBT-based power stack assembly during factory acceptance tests and service stops. The method combines vce measurements with high current in the Zero Temperature Coefficient (ZTC) operating region and with low sensing current within a specific current cycle using a proposed sampling and filtering technique. READ MORE

  7. 10. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

    Author : Juan Colmenares; Hans-Peter Nee; Leon M. Tolbert; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Gallium Nitride; Gate Driver; Harsh Environments; High Efficiency Converter; High Temperature; MOSFETs; Normally- ON JFETs; Reliability; Silicon Carbide; Wide-Band Gap Semiconductors; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. READ MORE