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Showing result 1 - 5 of 79 swedish dissertations matching the above criteria.
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1. A quantum for a quantum : Quantum simulators in exotic lattices
Abstract : This thesis centers on how to use exotic lattices in different ways to design potential quantum simulators. These exotic lattices are either real physical objects in the form of ultra cold atoms in bipartite optical lattice systems or lattice models revealed in state space. READ MORE
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2. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions
Abstract : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. READ MORE
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3. Lineshape in Quantum Cascade Lasers - Temperature, Screening and Broadening
Abstract : This dissertation deals with the optical properties of Quantum Cascade Lasers (QCLs). Studies are performed using transport calculations employing the theory of Non-Equilibrium Green's Functions, and screening is studied within the Random Phase Approximation. Focus is put on the temperature dependent effects in THz QCLs. READ MORE
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4. Surface-normal multiple quantum well electroabsorption modulators : for optical signal processing and asymmetric free-space communication
Abstract : Electroabsorption is the physical phenomenon by which the absorption of light in a medium can be controlled by applying an electric field. The Quantum–Confined Stark Effect, which makes the absorption band–edge in quantum wells very field–dependent, together with the strong absorption peak provided by excitons, are the physical foundations for the success of electroabsorption modulators based on quantum well structures in telecommunication networks. READ MORE
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5. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures
Abstract : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. READ MORE