Search for dissertations about: "Qamar Ul Wahab"

Found 4 swedish dissertations containing the words Qamar Ul Wahab.

  2. 1. Pulse-Width Modulated RF Transmitters

    Author : Muhammad Fahim Ul Haque; Ted Johansson; Dake Liu; Qamar Ul Wahab; Franz Dielacher; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The market for wireless portable devices has grown signicantly over the recent years.Wireless devices with ever-increased functionality require high rate data transmissionand reduced costs. READ MORE

  4. 2. Microwave Power Devices and Amplifiers for Radars and Communication Systems

    Author : Sher Azam; Qamar ul Wahab; Erik Janzén; Georg Boeck; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Semiconductor physics; Halvledarfysik;

    Abstract : SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. READ MORE

  5. 3. Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems

    Author : Ahsan-Ullah Kashif; Qamar-ul Wahab; Christer Svensson; Joachim Wurfl; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; RF-LDMOS; power amplifiers; technology CAD; load-pull; non-linear analysis; and switching analysis; Semiconductor physics; Halvledarfysik;

    Abstract : The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. READ MORE

  6. 4. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

    Author : Sadia Muniza Faraz; Qamar ul Wahab; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. READ MORE