Search for dissertations about: "RF circuit"

Showing result 1 - 5 of 99 swedish dissertations containing the words RF circuit.

  2. 1. Vertical InAs Nanowire Devices and RF Circuits

    Author : Martin Berg; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; Metal-oxide-semiconductor field-effect transistor; Transistor; Vertical; InAs; III-V semiconductor; Nanowire; Fabrication; DC; Resistor; TLM; RF; Mixer; Circuit.;

    Abstract : Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been facilitated by scaling down the dimensions of the most important electronic component in modern electronics: the Si-based MOSFET. READ MORE

  4. 2. Nanowire Transistors and RF Circuits for Low-Power Applications

    Author : Karl-Magnus Persson; Institutionen för elektro- och informationsteknik; []
    Keywords : InAs; Nanowire; Metal-oxide-semiconductor field-effect transistor; MOSFET; RF; Mixer; Circuit; 1 f-noise; Simulation; Modelling;

    Abstract : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. READ MORE

  5. 3. InAs Nanowire Devices and Circuits

    Author : Kristofer Jansson; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Modelling; Circuit; Simulation; Ballistic; Capacitor; Transistor; RF; Band structure; III-V semiconductor; InAs; MOSFET; Metal-oxide-semiconductor field-effect transistor; Nanowire; Amplifier;

    Abstract : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. READ MORE

  6. 4. Multiband LNA Design and RF-Sampling Front-Ends for Flexible Wireless Receivers

    Author : Stefan Andersson; Christer Svensson; Marc Tiebout; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; RF; Microelectronics; Multiband LNAs; RF-Sampling; Sampling Front-Ends; Flexible Wireless Receivers; Multistandard Receivers.; Electronics; Elektronik;

    Abstract : The wireless market is developing very fast today with a steadily increasing number of users all around the world. An increasing number of users and the constant need for higher and higher data rates have led to an increasing number of emerging wireless communication standards. READ MORE

  7. 5. Modelling, Analysis and Design of RF Mixed-Signal Mixer for Wireless Communications

    Author : Li Li; KTH; []
    Keywords : RF; INTEGRATED CIRCUITS; MIXED-SIGNAL; MIXER; WIRELESS COMMUNICATIONS; NOISE ANALYSIS; SUBSTRATE COUPLING.;

    Abstract : The explosive growth of the market for wirelesscommunications is driving low cost, highly integrated designsand complex RF/analog mixed-signal integrated circuit (RF AMSIC) products. RF transceiver application is one of the mostimportant wireless applications. READ MORE