Search for dissertations about: "RHEED"

Showing result 1 - 5 of 8 swedish dissertations containing the word RHEED.

  1. 1. RHEED and RD studies of III-V semiconductors

    University dissertation from Solid State Physics

    Author : Bert Junno; [1996]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; reflectance anisotropy; reflectance difference; RHEED; reflection high energy electron diffraction; III-V semiconductors; GaP; GaAs; InP; InAs; reflection high energy electron diffraction RHEED ; reflectance difference RD ; phase diagrams; surface reconstructions; Fysicumarkivet A:1996:Junno; Halvledarfysik; CBE GaAs; Semiconductory physics; chemical beam epitaxy; surface phase diagrams; RDS; RD; RAS;

    Abstract : The published papers and introductory part of this thesis concentrate on the in-situ characterization of (001) surfaces of GaAs, InAs, InP and GaP. The experimental tools used in these studies were a chemical beam epitaxy (CBE) machine equipped with a reflection high energy electron (RHEED) system and a reflectance difference (RD) optical set-up. READ MORE

  2. 2. STM studies of epitaxial overlayers formed by metal deposition : Mo on MgO, Ni on SiC and Sn on Si

    University dissertation from Linköping : Linköpings universitet

    Author : Thorbjörn Jemander; [2000]

    Abstract : Magnetron sputtering and molecular beam epitaxy (MBE) have been used to deposit metallic overlayers on semiconducting and insulating materials such as Mo on MgO, Ni on SiC(0001) and Sn on Si(111). The layers have been annealed and characterized with scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), low energy electron diffration (LEED), refiecti ve high energy electron diffraction (RHEED) and atomic force microscopy (AFM). READ MORE

  3. 3. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

    University dissertation from Linköping : Linköpings universitet

    Author : Otto Zsebök; [2000]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

    Abstract : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). READ MORE

  4. 4. STM studies of overlayers on semiconductor or insulator surfaces

    University dissertation from Linköping : Linköpings universitet

    Author : Thorbjörn Jemander; Struan Gray; [2001]

    Abstract : Scanning tunneling microscopy (STM) operated in ultra-high vacuum (UHV) has been used to study overlayers on semiconductor or insulator surfaces. The overlayers have been deposited by magnetron sputtering, thermal evaporation or by gas exposure, and the investigated material systems include Mo on MgO, Ni on SiC, Sn on Si(lll), C on Si(lO0) and O on Si(lll). READ MORE

  5. 5. Microstructural properties of some oxide thin films studied by X-ray diffraction and extended X-ray absorption fine structure

    University dissertation from Fysiska institutionen

    Author : Arturas Vailionis; [1997]
    Keywords : ;

    Abstract : The microstructure of some high-temperature superconductorrelated oxide thin films was studied by X-ray Diffraction (XRD)and Extended X-ray Absorption Fine Structure (EXAFS)techniques. A general one-dimensional kinematic x-raydiffraction model was further developed to quantitativelyanalyze the structural properties of complex layered films. READ MORE