Search for dissertations about: "RHEED"

Showing result 1 - 5 of 7 swedish dissertations containing the word RHEED.

  1. 1. STM studies of epitaxial overlayers formed by metal deposition : Mo on MgO, Ni on SiC and Sn on Si

    Author : Thorbjörn Jemander; Linköpings universitet; []
    Keywords : ;

    Abstract : Magnetron sputtering and molecular beam epitaxy (MBE) have been used to deposit metallic overlayers on semiconducting and insulating materials such as Mo on MgO, Ni on SiC(0001) and Sn on Si(111). The layers have been annealed and characterized with scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), low energy electron diffration (LEED), refiecti ve high energy electron diffraction (RHEED) and atomic force microscopy (AFM). READ MORE

  2. 2. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

    Author : Otto Zsebök; Chalmers University of Technology; []
    Keywords : AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

    Abstract : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). READ MORE

  3. 3. Microstructural properties of some oxide thin films studied by X-ray diffraction and extended X-ray absorption fine structure

    Author : Arturas Vailionis; KTH; []
    Keywords : ;

    Abstract : The microstructure of some high-temperature superconductorrelated oxide thin films was studied by X-ray Diffraction (XRD)and Extended X-ray Absorption Fine Structure (EXAFS)techniques. A general one-dimensional kinematic x-raydiffraction model was further developed to quantitativelyanalyze the structural properties of complex layered films. READ MORE

  4. 4. STM studies of overlayers on semiconductor or insulator surfaces

    Author : Thorbjörn Jemander; Struan Gray; Linköpings universitet; []
    Keywords : ;

    Abstract : Scanning tunneling microscopy (STM) operated in ultra-high vacuum (UHV) has been used to study overlayers on semiconductor or insulator surfaces. The overlayers have been deposited by magnetron sputtering, thermal evaporation or by gas exposure, and the investigated material systems include Mo on MgO, Ni on SiC, Sn on Si(lll), C on Si(lO0) and O on Si(lll). READ MORE

  5. 5. Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs

    Author : Carl-Mikael Zetterling; KTH; []
    Keywords : ;

    Abstract : Silicon carbide (SIC) is a wide bandgap semiconductor thathas been suggested as a replacement for silicon in applicationsusing high voltages, high frequencies, high temperatures orcombinations thereof. Several basic process steps need to bedeveloped for reliable manufacturing of long-term stableelectronic devices. READ MORE