Search for dissertations about: "Radio-frequency circuits"
Showing result 1 - 5 of 30 swedish dissertations containing the words Radio-frequency circuits.
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1. Linear Transmitter Design Using Nonlinear Analog Circuits
Abstract : This dissertation deals with analog techniques at both the architecture and circuit design levels for designing power efficient linear radio-frequency (RF) transmitters. The use of nonlinear analog integrated circuits to implement certain critical signal processing functions for the multiplicative feedback and LINC techniques is investigated with the aim of improving the system performance in terms of complexity, linearity and power efficiency. READ MORE
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2. Radio frequency integrated circuits for 24 GHz radar applications
Abstract : .... READ MORE
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3. Digital Phase Locked Loops for Radio Frequency Synthesis
Abstract : The demands for an ever higher data rate and a more varied functionality at minimal cost and power consumption have been the driving force behind most innovations in wireless communication systems. Intensive efforts have been made to develop Radio Frequency (RF) Integrated Circuits (ICs) and systems using low-cost Complementary Metal Oxide Semiconductor (CMOS) processes. READ MORE
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4. III-V Nanowire MOSFET High-Frequency Technology Platform
Abstract : This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. READ MORE
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5. Electrical Characterisation of III-V Nanowire MOSFETs
Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE