Search for dissertations about: "Reverse breakdown voltage"

Showing result 1 - 5 of 6 swedish dissertations containing the words Reverse breakdown voltage.

  2. 1. Design, Processing and Characterization of Silicon Carbide Diodes

    Author : Uwe Zimmermann; KTH; []
    Keywords : silicon carbide; diodes; high-voltage; dislocations; electronics;

    Abstract : Electronic power devices made of silicon carbide promisesuperior performance over today's silicon devices due toinherent material properties. As a result of the material'swide band gap of 3. READ MORE

  4. 2. From Light to Dark : Electrical Phenomena in Cu(In,Ga)Se2 Solar Cells

    Author : Piotr Szaniawski; Marika Edoff; Uwe Zimmermann; Jörgen Olsson; Thomas Walter; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Solar cells; Photovoltaics; Cu InGa Se2; CIGS; Electrical characterization; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : In Cu(In,Ga)Se2 (CIGS) solar cells the CIGS layer serves as the light absorber, growing naturally p-type. Together with an n-type buffer layer they form a p-n heterojunction. Typically, CdS is used as a buffer, although other, less toxic materials are investigated as alternatives. READ MORE

  5. 3. Dynamic avalanche in Si and 4H-SiC power diodes

    Author : Martin Domeij; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Abstract : Semiconductor power modules for the control of high currentsand high voltages have important applications in motor drives,traction and power transmission. Dynamic avalanche is of atechnological interest since it may limit the safe operatingarea for bipolar switching devices and for power diodes, whichare important integral parts of a power module. READ MORE

  6. 4. 4H-SiC epitaxy investigating carrier lifetime and substrate off-axis dependence

    Author : Louise Lilja; Peder Bergman; Jawad ul-Hassan; Ulrike Grossner; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : Silicon carbide (SiC) is a wide bandgap semiconductor with unique material properties making it useful for various device applications using high power, high frequency and high temperature. Compared to Si-based electronics, SiC based electronics have an improved energy efficiency. READ MORE

  7. 5. CVD growth and material quality control of silicon carbide

    Author : Jie Zhang; Roland Rupp; Linköpings universitet; []
    Keywords : ;

    Abstract : SiC has emerged as a promising semiconductor to replace Si in high power, high frequency and high temperature electronics. Thanks 1to the advantageous intrinsic material properties, such as large band gap, high electric breakdown field, high thermal conductivity and highly inert chemical properties, intensified efforts world-wide have been attracted in developing crystal growth technology and device fabrication processes for the SiC components. READ MORE