Search for dissertations about: "Schottky barrier MOSFET"

Showing result 1 - 5 of 7 swedish dissertations containing the words Schottky barrier MOSFET.

  1. 1. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Author : Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Abstract : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. READ MORE

  2. 2. Integration of metallic source/drain contacts in MOSFET technology

    Author : Jun Luo; Mikael Östling; Shi-Li Zhang; Anthony O'Neill; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; Semiconductor physics; Halvledarfysik;

    Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE

  3. 3. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

    Author : Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

    Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE

  4. 4. Schottky Contacs on Silicon Nanowires

    Author : Johan Piscator; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Silicon On Insulator SOI ; Schottky contacts; Palladium silicide; Silicon nanowire;

    Abstract : This thesis demonstrates the effect of charge on Schottky barrier height for metal contacts at the end surfaces of silicon nanowires. It is shown, by measurements and analytical models, how the effective electron barrier is lowered by a positive charge introduced into an oxide embedding the wire. READ MORE

  5. 5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Author : Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. READ MORE