Search for dissertations about: "Schottky barrier height lowering"

Found 2 swedish dissertations containing the words Schottky barrier height lowering.

  1. 1. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications

    University dissertation from Kista : Mikroelektronik och informationsteknik

    Author : Sang Kwon Lee; KTH.; [2002]
    Keywords : Silicon carbide; ohmic and schottky contacts; co-evaporation; current-voltage; powre devices; nano-particles; Schottky barrier height lowering; TLM structures;

    Abstract : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. READ MORE

  2. 2. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Valur Gudmundsson; KTH.; [2011]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

    Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE