Search for dissertations about: "Schottky contact"

Showing result 11 - 15 of 29 swedish dissertations containing the words Schottky contact.

  2. 11. Schottky barriers and Schottky barrier based devices on Si and SiC

    Author : Christer Fröjdh; KTH; []
    Keywords : ;

    Abstract : This work is devoted to a study of the formation andcharacterisation of Schottky Barriers on differentsemiconductors with an extension to the development of devicesbased on Schottky barriers. The major part of the work has beendone on 6H-SiC, but Si and SiGe alloys have also been used. READ MORE

  4. 12. Integration of metallic source/drain contacts in MOSFET technology

    Author : Jun Luo; Mikael Östling; Shi-Li Zhang; Anthony O'Neill; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; Semiconductor physics; Halvledarfysik;

    Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE

  5. 13. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications

    Author : Sang Kwon Lee; KTH; []
    Keywords : Silicon carbide; ohmic and schottky contacts; co-evaporation; current-voltage; powre devices; nano-particles; Schottky barrier height lowering; TLM structures;

    Abstract : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. READ MORE

  6. 14. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

    Author : Yu Cao; Chalmers tekniska högskola; []
    Keywords : Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; #955; Depth Profile; I-V Characteristics.;

    Abstract : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. READ MORE

  7. 15. Numerical modelling of hot electron transport in Schottky-diodes and heterojunction structures

    Author : Hans Hjelmgren; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; n-GaAs; ; energy balance equations; dc-properties;

    Abstract : A one-dimensional drift-diffusion model, including energy balance equations, is used to model Schottky-diodes and heterojunction structures. The set of equations are solved simultaneously with a finite-difference iterative scheme. READ MORE